Okmetic’s Power GaN Silicon Substrates are engineered for high-performance GaN epitaxial processing. Using Advanced Magnetic Czochralski (A-MCz®) crystal growth, these substrates achieve optimized dopant concentrations and lattice structure for reduced wafer bow and enhanced mechanical stability. This makes them ideal for high-voltage GaN HEMT devices and high-power LEDs. With customizable options such as thicknesses up to 1,150 µm and optional back surface treatments, they offer flexibility to meet diverse GaN application needs, supporting scalable, cost-effective manufacturing without compromising performance.
