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    Glen Wilk

    VP Technology
    ASM
    Phoenix, AZ, United States

    Glen Wilk is a Vice President of Technology at ASM, where he currently specializes in developing novel Atomic Layer Deposition (ALD) materials and processes for advanced nodes in the semiconductor industry. Prior to his current role, Glen ran the ALD business unit for 15 years and the Epitaxy business unit for 6 years at ASM, where he was responsible for leading the development of the Pulsar, Synergis, and Intrepid products. He is very passionate about innovating disruptive and differentiated hardware, processes and materials.

    Before ASM, he worked as a Senior Member of Technical Staff in the Central Research Labs at Texas Instruments, where his interests focused on silicon-based resonant tunneling diodes, novel transistor gate stacks, and advanced process integration. Glen subsequently worked as a Distinguished Member of Technical Staff in the Advanced Materials Department at Bell Laboratories in Murray Hill, N.J., where he researched high-k dielectrics, metal gate stacks, and CMOS device integration, as well as indium gallium arsenide and lithium niobate materials for high-speed and optoelectronic devices, respectively.

    Glen received his bachelor’s degree in Materials Science from Cornell University, and his master’s degree and PhD in Applied Physics from Harvard University. Among his publications is an invited review paper in the Journal of Applied Physics on high-permittivity gate dielectrics with over 6,000 citations, which ranks in the Top 10 cited papers in the 90-year history of the publication. In addition, he has published solicited cover review articles in Materials Research Society Bulletin and Semiconductor International. Glen currently has over 50 journal publications and holds over 60 U.S. patents.

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